The recovery behavior of quenched‐in defects in TiAl alloys was studied by positron annihilation lifetime measurements. The results indicate that there is a certain number of grain boundaries in fully annealed TiAl samples, and after being quenched, the samples contain quite a lot of secondary defects such as vacancy clusters besides a large amount of mono‐vacancies. The vacancy clusters aggregate further in the temperature range from 300 to 600 °C due to the impurity atoms.
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