Advanced electronic devices based on carbon nanotubes (NTs) and various types of nanowires (NWs) could have a role in next-generation semiconductor architectures. However, the lack of a general fabrication method has held back the development of these devices for practical applications. Here we report an assembly strategy for devices based on NTs and NWs. Inert surface molecular patterns were used to direct the adsorption and alignment of NTs and NWs on bare surfaces to form device structures without the use of linker molecules. Substrate bias further enhanced the amount of NT and NW adsorption. Significantly, as all the processing steps can be performed with conventional microfabrication facilities, our method is readily accessible to the present semiconductor industry. We use this method to demonstrate large-scale assembly of NT- and NW-based integrated devices and their applications. We also provide extensive analysis regarding the reliability of the method.
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ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.
Promotersfor the (Alkyne)hexacarbonyldicobalt-Based Cyclopentenone Synthesis.-DMSO is shown to promote both intra-and intermolecular cyclopentanone formation from alkenes and (alkyne)hexacarbonyldicobalt complexes. Using cyclopentene (IX) or norbornadiene as a alkene, the cyclopentenones (X) and (XI) are formed exclusively or mainly, respectively. The formation of the cyclopentenone (X) is also promoted by a variety of solvents, but only acetonitrile and methanol give comparable or slightly better yields. The use of these promoters leads to significant changes in both regio-and stereoselectivity when compared to other reaction conditions. -(CHUNG, Y. K.; LEE, B. Y.; JEONG, N.; HUDECEK, M.; PAUSON, P. L.; Organometallics 12 (1993) 1, 220-223; Dep. Pure Appl. Chem., Univ. Strathclyde, Glasgow G1 1XL, UK; EN)
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