The use of an ultrathin Ru-Ta-C film as a barrier for copper metallization in sub-32-nm ultra-large-scale integration ͑ULSI͒ has been evaluated. The films, fixed at 5 nm, were deposited by magnetron sputtering using Ru and TaC targets, and the film composition and structure were adjusted by tuning the respective deposition power. The structure of the Ru-Ta-C films gradually changed from Ru 4 Ta͑C͒ to nanocrystalline or nearly amorphous when optimizing TaC. For a sandwiched scheme of Cu/Ru 82 Ta 12 C 5 /Si or Cu/Ru 77 Ta 15 C 7 /Si, the failure temperature was at least 750°C. We also electroplated Cu directly onto a Ru-Ta-C film without Cu seeding. Because of their low resistivity ͑ Ͻ 100 ⍀ cm͒ and high thermal stability, Ru-Ta-C films are promising as a Cu barrier.
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