This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 128.123.44.23 On: Mon, 22 Dec 2014 16:45:24 REFLECTION OF ELECTRONS IN THIN FILMS 2805of the scattering coefficient p attained in our experiments to the microstructure of the films, which was investigated by transmission-electron microscopy and electron diffraction. The electron micrographs and diffraction patterns of seven of our films are shown in Fig. 4. The micrographs and diffraction patterns of the films, which were deposited under ultrahigh-vacuum conditions [ Fig. 4(a)], indicate relatively large grain sizes (of the order of several hundred to several thousand angstroms) and a preferred overgrowth of crystallites. Such a structure is close to the structure of singlecrystal films for which predominantly specular reflection of electrons at the surfaces were reported for gold and silver.4--6 On the other hand, films condensed at higher ambient pressures show a more disordered structure [ Fig. 4(b) ] and a higher resistivity than those deposited under ultrahigh-vacuum conditions.It is therefore very probable that thin metal films JOURNAL OF APPLIED PHYSICS having properties close to those of epitaxially grown films can be produced, even on amorphous substrates, at room temperature provided that the amount of contaminants in the ambient atmosphere is very low.* This work is based in part on the D.Se. thesis submitted by
T. Schlesinger toThe stress fields (T'; and the dilatation field 4l have been obtained in contour plots for a straight dislocation situated perpendicular to a reflection plane in an anisotropic crystal. A common characteristic feature of the results obtained for various metals at room temperature is that no twofold symmetry exists in any of (T,] or in 4l with respect to any axis normal to the dislocation line. For certain values of the modified elastic compliances S'6 and S26, anomalous patterns have been found in the elastic fields that each of the (Tn, (T33, and 4l fields is divided into six sectors as compared to the usual cases of two sectors, and either of 0'12 and 0'22 fields is divided into two sectors in contrast to the normal pattern of six sectors. Some direct effects of the asymmetries and certain anomalies of these elastic fields on deformation processes are discussed.
A detailed analysis is made of the displacement fields of glissile dislocations of active slip systems in common crystal structures by taking account of elastic anisotropy. Each displacement component can be generally expressed in terms of twelve real coefficients. The cases for which analytic expressions of these coefficients are possible are enumerated. An efficient method of numerical calculation for a general case is introduced, and numerical results for Cu, α-Fe, and Zn are given in polar diagrams. ``Bending'', ``warping'', and ``dimpling'' of lattice planes about the dislocation axes are discussed in terms of radial and angular dependencies of the displacement components normal to Burgers vector. Choices of integration constants are described in accordance with symmetry properties about the dislocation axes.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.