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Passivation effects in In doped n-CdTe upon exposure to rf hydrogen plasma are studied by electrical and photoluminescence measurements and were found to be maximum at about 150 °C. Depth profiling by capacitance-voltage measurements show passivation of approximately an order of magnitude at 150 °C and 50% at 170 °C. No visual surface damage is seen. Reverse bias annealing experiments show that atomic hydrogen drifts in a charged state in n-CdTe, with reactivation kinetics of the donors different from the other well studied semiconductors. Manifestation of the donor passivation in photoluminescence is seen by the reduction of the donor bound luminescence.

Hydrogen passivation effects in In doped n-CdTe upon exposure to rf hydrogen plasma have been studied by electrical and photoluminescence measurements. Shallow dopant passivation of approximately an order of magnitude at 150°C and 50% at 170°C is observed. No visual damage is seen. Reverse bias annealing effects are also studied. Results are discussed.

The temperature and compositional dependence of the absorption band edge of Cd1 —xMnxTe mixed crystals up to x = 0.4 are measured between 4.2 and 400 K. It is found that for all compositions the portion of the absorption edge between 102 and 103 cm−1 changes exponentially with photon energy and the change of the slope is governed mainly by the exciton—phonon interaction. A decrease of the steepness of the tail with growing manganese content is observed and is attributed to alloying induced disorder. Some anomalies in the temperature dependence of the band edge of CdMnTe are observed and are explained by the influence of the unfilled Mn 3d shell on the sp3 bands of the alloy.