The electronic conductivity of synthetic boron-doped diamonds is studied in the temperature range 12-1300 K. It is shown that in the low-temperature range {below 150-100'K) the results are best interpreted in terms of variable-range hopping. An attempt to evaluate quantitatively the parameters which characterize this hopping mechanism is made using the boron concentration and the degree of compensation determined from the variation of conductivity in the high-temperature range, coupled with optical-absorption measurements. The efFect of irradiation with energetic electrons, which introduced new compensating centers, is investigated and can also be explained in terms of the theory for the hopping mechanism.
The anisotropy of the defect introduction rates of two hole traps (H4 and HS) detected by deeplevel transient spectroscopy measurements in room-temperature electron-irradiated p-type InP has been used to determine the sublattice to which the created defects belong. It appears that the HS defect belongs to the indium sublattice and it is confirmed that the H4 defect belongs to the phosphorus sublattice. Using the variations of the introduction rates of H4 and HS with the electron energy, a threshoM energy of 8 eV is deduced for P-atom displacement and of 3 and 4 eV for In-atom displacement in the two crystallographic directions In[111] and P[111],respectively. A model taking into account the secondary collisions of the primary knock-on atom with the first and second neighbors is proposed to explain the complex behavior of the anisotropy ratio curve measured for the HS defect.
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