The utility of copper interconnects may ultimately depend on the ability to protect copper from corrosion. We have studied the capacity of lH-benzotriazole (1H-BTA) to provide a protective and stable surface film able to withstand harsh chemical and thermal environments. The film was characterized with electrochemical techniques, in situ ellipsometry, ex situ time-of-flight static secondary ion mass spectrometry, high-temperature mass spectrometry, and accelerated temperature and humidity tests. Several important passivating film properties (thickness, degree of polymerization, thermal stability, corrosion resistance) depend critically on the details of the film preparation conditions. The best corrosion protection is offered by the thin film formed on an oxidized Cu surface. This film has also shown the slowest growth kinetics and the highest degree of polymerization in the Cu-BTA structure.With more aggressive performance requirements for multilevel interconnections, higher conductivity metals, such as copper, are finding their way into a number of products. Copper is a relatively noble metal. Nevertheless, it reacts easily in ordinary, oxygen containing, environments (1). In view of the limited passivation offered by Cu-oxides, we have studied the effectiveness of organic azoles, such as lH-benzotriazole (1H-BTA), as a general method of controlling Cu degradation. For over 40 years 1H-BTA has been successfully used in the prevention of atmospheric Cu corrosion (2), in packaging, storage and transport, in the reduction of thermal oxidation and, in particular, in the protection of copper under immersed conditions (Ref. (3) and references within). The relevant literature is abundant but not unified in its teaching about bonding, thickness, composition and structure of the resulting film and the nature of its protection.Recent work from our laboratory, based on a combination of electrochemical, ellipsometric, and XPS data, has shown that the spontaneous reaction of Cu and 1H-BTA under a variety of conditions leads to the formation of Cu-BTA (4, 5), with copper being Cu +1 , as reported elsewhere (6-12). The formation of a Cu-N bond was clearly identified from the Cu LMM Auger lines. The film was formed both on an oxidized and an oxide-free Cu surface, in contrast to reports suggesting that the presence of Cu 2 O is a prerequisite for the buildup of 14). The thickness of the film was determined to be 0.5-4 nm in the pH range from 3 to 12, reaching 25 nm only under harsh conditions, i.e., in pH 2. Several recent studies of ultrahigh vacuum deposited 1H-BTA have indeed detected 1H-BTA adsorption on clean Cu metal (14-16). An electrochemical equivalent of such a film was formed in our laboratory at Cu 0 kept in
