No abstract
Thin magnetic films have been prepared by cathodic sputtering on glass and metal substrates. The influence of the ferromagnetic cathode on the orienting magnetic field, as well as on the resulting magnetic behavior of the films is discussed. Use of a ``thin'' foil cathode is shown to be a simple method for minimizing the distorting effect of the cathode. Wall coercive force, anisotropy field, skew, and dispersion values are given for these films. Pulse behavior of a high-density bit plate in the biased mode of operation is also given.
A number of commercially available high-permeability nickel-iron-base alloys with low values of coercive force, magnetostriction, and crystalline anisotropy are of potential interest as materials for thin-film memory elements. Because of their compositional complexity, however, films of these alloys are not easily prepared by vacuum deposition. By use of bias sputtering, thin films of Mumetal, Conetic AA, Supermalloy, and 4–79 Permalloy have been successfully prepared. The effects of substrate temperature (100°–400°C) and film thickness (500–1000 Å) on the properties of wall-motion threshold H0, anisotropy field Hk0, dispersion α90, skew β, magnetostriction, and sheet resistivity have been experimentally determined. In general, for the same thickness and substrate temperature, the high-permeability alloys show lower H0 and Hk0 than the binary 81% Ni-19% Fe alloy. The data show that the reduction is most pronounced in the molybdenum-containing alloys, less so in Conetic AA, and least in Mumetal. Molybdenum additions appear to be the most effective in inhibiting the rate of increase of dispersion with increasing H0/Hk0 ratio; e.g., a Supermalloy film was deposited with H0/Hk0=0.9 Oe/0.4 Oe and α90=4.5°.
Thin ferromagnetic films of Ni-Fe-Mn alloys with nominal manganese contents of 3%, 5%, 8%, and 12% have been prepared from alloy cathodes by bias sputtering. The resulting film compositions selected closely parallel the null magnetostriction contour in the ternary composition diagram. The effects of substrate temperature (100°−350°C) and film thickness (500–1200 Å) on wall-motion threshold H0, anisotropy field Hk0, dispersion α90, skew Δβ, and magnetostriction have been experimentally determined. The following conclusions can be drawn from the data: (1) There is a minimum-film bias potential at which uniform films exhibiting low dispersion of the easy axis are obtained. (2) For constant thickness and substrate temperature, H0 and Hk0 decrease with increasing manganese content. (3) For constant H0/Hk0 ratio, angular dispersion increases with increasing manganese content. (4) The alloys containing 3% and 5% Mn show the typical dependence of H0 and Hk0 on deposition temperature (i.e., H0 increases and Hk0 decreases with increasing deposition temperature). (5) For films of the 8% Mn alloy, H0 is relatively insensitive to deposition temperature. (6) For films of the 12% Mn alloy, H0 decreases with increasing deposition temperature.
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