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Ge diffusion after solid-phase epitaxy of Si amorphized by Ge++ implantation has been measured by backscattering spectrometry. Asymmetrically enhanced diffusion is observed for 〈111〉-oriented samples annealed at 1050 °C. A high concentration of twins observed by cross-section transmission electron microscopy seems to be connected to the enhancement. There is a large difference in Ge diffusion as well as defect structure between 〈100〉- and 〈111〉-oriented samples. Hole mobilities and sheet resistivities have been measured and compared for B- and B+Ge-implanted samples. The effect of Ge on the electrical properties is small.

Molecular-beam epitaxial growth of GaAs on (100)ScxEr1−xAs can result in domains of various orientations. Most of the GaAs domains are of the epitaxial (100) or the twin related (221) orientation. A {111} orientation is also common. We have studied the orientational relationships of these domains by transmission electron microscopy. The polarity of small {111}GaAs domains on (100)ScErAs have been determined by electron channeling. We observe that the polarity is such that the GaAs [1̄1̄1̄] direction (as opposed to the [111] one) points outward from the original ScxEr1−xAs(100) surface. We use this observation in discussing possible models of the interface between ScErAs and GaAs.

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