Articles you may be interested inSplitting of the heavy and light hole bands due to the indium-induced strain in three inch indium-alloyed semiinsulating GaAs substrates Photoluminescence of indiumalloyed semiinsulating GaAs subjected to bulk heat treatments Room-temperature photoreflectance measurements were used to determine the radial and axial distribution onow levels of indium in 3-in.-diameter semi-insulating bulk GaAs materials grown by the liquid-encapsulated Czochralski method. These results were compared with 4.2-K photoluminescence data and found to be accurate and more convenient for this application. Room-temperature photoreflectance allows an accurate determination of the indium content in the range of mole fraction 0.1 %-2.0% with standard deviation of 0.03 %. Two types of radial inhomogeneity were found in commercially available GaAs wafers. This is discussed in terms of indium segregation and shape of solid and liquid interface during the crystal growth.
We report the use of rooni-Lemperature photorefleetance measuremenLs to deLenitine radial arid axial nonuniformity of low levels of indium in 3-inch diameter semi-insulaLing GaAs bulk materials grown by the liquid-encapsulaLed Cochralski method. These resulLs were compared with umc. Types of inhomogeneities are discussed in Lerms of indium segregation and the shape of the solid and liquid interface during crystal growth.
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