PbSeTe-based quantum dot superlattice structures grown by molecular beam epitaxy have been investigated for applications in thermoelectrics. We demonstrate improved cooling values relative to the conventional bulk (Bi,Sb)2(Se,Te)3 thermoelectric materials using a n-type film in a one-leg thermoelectric device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.7 K. The typical device consists of a substrate-free, bulk-like (typically 0.1 millimeter in thickness, 10 millimeters in width, and 5 millimeters in length) slab of nanostructured PbSeTe/PbTe as the n-type leg and a metal wire as the p-type leg.

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We describe the first demonstration of PbTe-based, cross-plane quantum-dot superlattice (QDSL) unicouple thermoelectric generator devices fabricated from nanostructured, thick-film materials (∼100μm). Both n- and p-type QDSL materials were investigated. With ∼220K temperature difference across small thermoelements (∼95μm length, 4mm2 cross-sectional area), electrical power outputs up to 89mW and power densities up to 2.2W∕cm2 have been demonstrated for both n- and p-type materials. The devices consist of a substrate-free, bulklike slab of molecular beam epitaxy grown PbSeTe∕PbTe QDSL material as the n- or p-type leg and a copper wire as the other p-type leg.