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This work presents HiK/metal gate Ge MOSFET devices with a conventional layout and made in a complete Si-like process flow. The fabricated pFET long-channel conventional devices equal the best pFET long-channel mobility results obtained elsewhere on ring-shaped devices made with simplified process flows. The hole mobility is significantly above the Si universal, with a peak mobility value of ∼250 cm 2 (V s) −1 . The fabricated nFET devices have electron mobility much lower than the Si universal, as is commonly observed. Also, deep sub-micron Ge pFET devices with gate lengths below 0.2 µm have been made. The implementation of a novel NiSi-like NiGe module is key to obtain deep sub-micron devices with not only a high-mobility channel, but also with an acceptably low series resistance. 0.19 µm deep sub-micron Ge devices with germanided source/drain regions demonstrate that the mobility enhancement observed in long-channel Ge pFETs as compared to Si HiK/metal gate pFETs can indeed result in deep sub-micron Ge devices with a higher drive.

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