The monolithic integration of MicroElectroMechanical Systems (MEMS) with the driving, controlling, and signal processing electronics promises to improve the performance of micromechanical devices as well as lower their manufacturing, packaging, and instrumentation costs. Key to this integration is the proper interleaving, combining, and customizing of the manufacturing processes to produce functional integrated micromechanical devices with electronics.We have developed a MEMS-first monolothic integrated process that first seals the micromechanical devices in a planarized trench and then builds the electronics in a conventional CMOS process.To date, most of the research published on this technology has focused on the performance characteristics of the mechanical portion of the devices, with little information on the attributes of the accompanying electronics. This work attempts to reduce this information void by presenting the results of SPICE Level 3 and BSIM3v3.1 model parameters extracted for the CMOS portion of the MEMS-first process. Transistor-level simulations of MOSFET current, capacitance, output resistance, and transconductance versus voltage using the extracted model parameters closely match the measured data. Moreover, in model validation efforts, circuit-level simulation values for the average gate propagation delay in a 101-stage ring oscillator are within 13-18% of the measured data. In general, the BSIM3v3.1 models provide improved accuracy over the SPICE Level 3 models. These results establish the following: (1) the MEMS-first approach produces functional CMOS devices integrated on a sbgle chip with MEMS devices and (2) the devices manufactured in the approach have excellent transistor characteristics. Thus, the MEMS-first approach renders a solid technology foundation for customers designing in the technology.
Where the papers in these proceedings have been authond by contractors ofthe United States Government, neitherthe UnitedStatesGovemmentnoranyagencythelrtof, noranyoftheiremployees, makesanywmanty, expressed or implied, or assumes any legal liability or responsibility for any third party's use, or the results of such use, of any information, apparatus, product, or process disclosed in these proceedings, or represents that its use by such third party would not infringe privately owned rights. The views expressed in these proceedings are not necessarily those of the U.S. Nuclear Regulatory Commission.
This reportprovides supportingdocumeatationfor various tasks associatedwith the performanceof the probabilisticrisk aasessmeatfor Plant OperationalState $ (approximatelyCold Shutdownas defined by GrandGulf Technical Specificatiom) during s refueling outage at OnmdGulf, Unit I as documentedin Volume 2, Part 1 of NUREG/CR-6143. The report contains the following ,ppmdicss: I-Fault Trees J-Miscellaneous Topics Vol.
2%~ r e p a presents an application of ~~Q~~~i~~s t i c models and requirements of Allowed Outage Times (AOTs) and risk based criteria for determining the risk impact of the Surveillance Test Intervals (STIS) in eight Plant Operational Limiting Conditions of Operations (LCOs) in the Technical States (POSs) which encompass power operations, shutdown, Specifications (TSs) of a boiling water reactor during and refueling. This report also discusses insights concerning shutdown. This analysis studied the risk impact of the current TS action statements.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.