The origin of the excess capacitance of nonideal Schottky junctions on Si substrates is attributed to the external bias voltage dependent net charge density induced at an appropriate interface for which a functional dependence, in terms of empirical parameters, is explicitly suggested. This conjecture, resulting in the introduction of an additional term in the depletion layer differential capacitance, is verified on frequency dependent, room temperature, C–U data of our ionized cluster beam (ICB) deposited Ag/Si and Pb/Si Schottky junctions as well as on various other relevant published measurements. It is found, that the envelope of the calculated effective density of gap states of our ICB samples exhibits dense almost standing wave-like oscillations across the energy gap at the interface for which the envelope amplitude and number of nodes are sensitively dependent on the external bias voltage.
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