SiC coatings were successfully synthesized on NextelTM440 fibers by chemical vapor deposition (CVD) using methyltrichlorosilane as the original SiC source at 1373 K. After deposited, the fibers were fully surrounded by uniform coatings with some bulges. The X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HR-TEM) results indicated that the coatings were composed of β-SiC and free carbon. Moreover, thickness control of the coatings could be carried out by adjusting the deposition time. The coating thickness rose exponentially, and the exterior of the coatings became looser as the deposition time increased. The thickness of about 1.5 µm was obtained after depositing for 4 h. The coating thickness was also theoretically calculated, and the result agreed well with the measured thickness. Finally, the related deposition mechanism is discussed and a deposition model is built.
High-performance InAlN/GaN heterostructure by metalorganic chemical vapor deposition and field effect transistor with a nominal gate length of 0.2 μm on sapphire substrate were obtained. Low defects density and a high electron mobility of 1930 cm 2 /V·s were obtained for the heterostructure. The fabricated device exhibited remarkable RF characteristics, i.e. a cutoff frequency of 69GHz with the gate length of 0.2μm, suggesting the extraordinary performances reachable by InAlN based technology.
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