The barrier height of a Pd-CdS Schottky diode is reported to decrease markedly when exposed to hydrogen. This effect is believed to be due to the decrease in Pd work function. It makes a good simple hydrogen detector (even at 298 °K) over the range 500–5000 ppm H2.
The C-V characteristics of palladium gate MOS capacitors change significantly when exposed to an air ambient containing up to 4% hydrogen. From these experiments, it is concluded that these changes are due to the lowering of the palladium work function (by as much as 1 V) brought on by the formation of palladium hydride. Mobile charges in the oxide do not contribute to the observed C-V shifts brought about by exposure to hydrogen.
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