Electrically active defects induced by electron irradiation in Czochralski (Cz)grown Si crystals with low carbon content (N C 2 × 10 15 cm −3 ) have been studied by means of Hall effect measurements, deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS (LDLTS). It has been found that in n-type carbon-lean Cz-Si irradiated at room temperature a centre with an acceptor level at E c − 0.11 eV (E 0.11 ) is one of the dominant radiation-induced defects. This centre is not observed after irradiation in Cz-Si crystals with N C > 10 16 cm −3 . The E 0.11 trap anneals out in the temperature range 100-130 • C with the activation energy 1.35 eV.In p-type Cz-Si crystals with low carbon content and boron (N B 2 × 10 14 cm −3 ) one of the dominant radiation-induced defects has been found to be a bistable centre with an energy level at E v +0.255 eV (H 0.255 ). It has been inferred from the analysis of temperature dependences of electron occupancy of this level that it is the E(0/++) level of a defect with negative Hubbard correlation energy (negative U ). The activation energy for hole emission from the doubly positively charged state of the H 0.255 centre has been determined as 0.358 eV from LDLTS measurements.It is argued that the E 0.11 and H 0.255 energy levels are related to a complex incorporating an oxygen dimer and Si self-interstitial.
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