We have measured the room-temperature refractive indices of GaSe throughout the 0.7–1.4 and 2.4–5μm ranges using the minimum-deviation method of light through a prism with polarization either parallel (extraordinary refractive index ne) or perpendicular to the crystal optical c axis (ordinary refractive index no). The birefringence (Δn) at room temperature has been measured directly using polarized light interference fringes obtained in the transmittance from 1.73to4.97μm (three samples with thicknesses of 1108±1, 2480±1, and 2660±1μm) and in the range from 11.85–16.37μm (sample thickness of 6000±1μm). The no, ne, and Δn values determined from the positions of fringe maxima were compared to those obtained from prism measurements in the mid-IR and with previously published results which were mainly obtained by indirect methods. It was found that the prism method and interference fringe method resulted in values of no, ne, and Δn accurate to ±0.003 and ±0.006, respectively.
We report the results of investigating a low-voltage, polarization-insensitive, reflective-type modulator based on an epsilon-GaSe crystal and operated at the 1.960-eV line of a He-Ne laser. We demonstrate that the modulation in an Al-epsilon-GaSe-Cu device results mainly from the Franz-Keldysh effect. Relatively high speed and low operating voltage could make these modulators with Schottky-barrier contacts attractive devices in the red range of the spectrum.
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