Amorphous indium–gallium–zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300–1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700–1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current–gate voltage (I
d–V
g) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (V
th) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in V
th, whereas the field-effect mobility decreased considerably.
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