The photodiode e of BT/Si film has successfully fabricated by growing BT on the surface of the p-type Si (100) substrate using the hydrothermal method. BT films were made after preparing TiO2 film and deposited on a Si substrate via screen printing method. The structural, optical, electrical properties of the fabricated films were done. The morphology and distribution of the BT nanoparticles were homogenous and in the form of nanorods of 1.5 micron height through FESEM image. The I-V characteristic was conducted in dark and illuminate conditions with a Xenon lamp. The crystallite D size and strain were calculated using the Williamson Hall plot of BT film. The band gap of BT film is calculated using the Tauc and reflection method. The value of the energy gap extracted using the reflection method was greater than it was when using the Tawc method. The dark and (b) illuminated (J-V) characteristics have measured under simulated AM1 conditions for a BT/Si photodiode. The BT/Si film begins to become more conductive when illuminating power density increased, which qualifies the film for photovoltaic applications.
A BST/Si photodiode has been effectively synthesized by growth BST on the p-type Si (100) substrate utilizing the hydrothermal process. Screen printing was used to prepare TiO2 film deposited on Si substrate, then immersing TiO2 film in Ba(OH)2 and Sr(OH)2 solution to fabricate BST/Si photodiode using a hydrothermal process. The BST film was studied using X-ray diffraction, field-emission scanning electron microscopy, and reflection spectra. The band gap was calculated for a BT film using the reflection methods. Hall measurement confirmed the n-type conductivity of BST film. Curie temperature of the BST film was observed at 87°C according to DC measurement. The dark and illuminated (J-V) characteristics of the BST/Si photodiode have been measured under simulated AM1 conditions using a Xenon lamp. The Shockley-Read-Hall recombination caused unequal electron and hole capture rates that dominated to the I-V characteristics resulting in an absence of classic superposition phenomena. The open circuit voltage (Voc) measurement is carried out to know the recombination mechanism in an open circuit. The BST/Si film showed more conductivity after increasing illuminating power density, which qualifies it for photovoltaic applications.
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