AgInS 2 crystal could be grown by a Hot-Press (HP) method with pressure (10 ~ 90 MPa) at 700 ˚C. From X-ray diffraction measurements, the samples grown at 10 ~ 40 MPa were found to contain only AgInS 2 phase. However, a signal from AgIn 5 S 8 phase increased with increasing pressure above 40 MPa. The lattice parameters of a and c axes increased and were almost constants with increasing pressure below and above 40 MPa, respectively. A donor-type defect of interstitial Ag might be enhanced to electrical conductivity in the all samples because samples indicated n-type conductivity examined by thermoprobe analysis. Moreover, high purity sample could be obtained in the HP method because a free exciton emission was clearly and no deep emission was observed in the photoluminescence spectrum.
Undoped polycrystalline AgGaSe 2 crystals were successfully grown at a low temperature (700 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The grain size was approximately 55 nm. The presence of lattice defects such as Se vacancies and/or Ag interstitials may lead to an enhancement in electrical conductivity.
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