The (0001), (1010), and (2110) faces of Bi have been pulse laser melted at
0.5 J/cm2 with a Q-switched Ruby laser. Nomarski Interference
Contrast Microscopy, Channeling, and selective chemical etching have been
used to investigate the response to the laser irradiation. The response of
the material and the level of damage is shown to be strongly correlated to
the critical resolved shear stress characteristics in the particular
crystallographic direction studied.
The (0001), (1010), and (2110) faces ofBi have been pulsed laser irradiated at 0.5-0.8 J/cm2 with a £>-switched ruby laser. Nomarski interference contrast microscopy, channeling, and selective chemical etching have been used to investigate the response of the material to the laser irradiation. The response of Bi is shown to be strongly orientation dependent. The;^min and halfangle for the Bi (0001) surface have been measured and compared to theoretical values. The Bi(0001) surface has been shown to regrow epitaxially without an increase in the disorder. In contrast, the epitaxial regrowth of the Bi (TO 10) and Bi (2ll0) surfaces show a marked increase in disorder after irradiation. The levels of damage show a strong correlation to the critical resolved shear stress characteristics in the particular crystallographic orientation studied.
Low Energy Electron Diffraction (LEED)-Spot Profile Analysis and AugerElectron Spectroscopy (AES) have been used to study the response of Mo(100) single crystal surfaces to Q-switched, frequency doubled Nd:YAG laser pulses. The experiments were conducted in a special ultra-high vacuum (UHV) system which allowed the surfaces to be irradiated under controlled conditions. Laser fluences both above and below the melt threshold were employed.For the melted surfaces, good epitaxial regrowth was observed.The spot profile analysis indicates the formation of random islands on the surfaces. Surfaces which had been previously disordered by 3 KeY Ar+ implantation were laser surface melted and observed to regrow epitaxially as has been observed in the case of ion implanted silicon.The formation of the islands and stepped structures is explained by considering the activation of dislocation sources by the induced thermal stresses resulting in slip.
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