Nanosized inverted domain dots in ferroelectric materials have potential applications in ultrahigh-density rewritable data storage systems. Here, a data storage system based on scanning nonlinear dielectric microscopy and thin films of ferroelectric single-crystal lithium tantalite is presented. Through domain engineering, nanosized inverted domain dots have been successfully formed at a data density of 1.50 Tbit/in.2.
We report an ultrahigh-density ferroelectric data recording system
based on purely electrical principles, using a scanning nonlinear
dielectric microscopy technique and ferroelectric thin films of LiTaO3
single crystals. A nano-sized domain dot array of areal density of 1.50Tbit inch−2
has been successfully demonstrated in a
z surface of a congruent
LiTaO3
single-crystal film. The radius of the domain dots was 10.4 nm. These nano-dots
remained stable at least over 24 h, and could be over-written by dots. The
ferroelectric domain inversion characteristics using a stoichiometric LiTaO3
single-crystal film was also studied. A very small nano-sized domain dot with a
radius of 6 nm was successively formed.
Nano-sized inverted domain dots in ferroelectric materials is a technology with potential applications in ultrahigh-density rewritable data storage systems. Up to now, we have studied domain inversion characteristics of stoichiometric and congruent LiTaO 3 single crystals in nanoscopic area using scanning nonlinear dielectric microscopy (SNDM), which is the technique for observing ferroelectric polarization distribution with sub-nanometer resolution. In this study, we have revealed nano-sized inverted domain remained stably for a long time, and successfully formed inverted domain dots at a data density of 1.50 Tbit/inch 2 , representing the highest memory density for rewritable electric data storage reported to date.
Potassium niobate (KNbO3) thin films have been deposited on silicon (Si) and strontium titanate (SrTiO3) substrates by metalorganic chemical vapor deposition. Stoichiometric KNbO3 films were obtained by adjusting the partial pressure of precursors. The crystallinity was examined by x-ray diffraction and reflection high-energy electron diffraction. Single-crystal (010) KNbO3 films with smooth surface were heteroepitaxially grown on (110)SrTiO3 substrate at 850 °C.
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