Lanthanum-modified lead zirconate titanate (PLZT) thin films (0.3∼0.4 µm) have been prepared on Pt/SiO2/Si substrates at 650°C by the metal-organic chemical vapor deposition (MOCVD) method. The electrical properties of the films were examined as a function of lanthanum content. The relative dielectric constants increased as the La content increased to about 5 at%, and beyond this value, it became constant at 600. The remanent polarization and coercive field decreased from 22 to 1 µC/cm2 and from 90 to 20 kV/cm with increasing La content in the range of 0∼11 at%, respectively. The leakage current density decreased considerably with the addition of La, and was 8×10-9 A/cm2 at an applied voltage of 5 V. The switched charge densities of PLZT films showed almost no change up to switching cycles of 1×1012 at a bipolar pulse of ±5 V.
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