Single junction crystalline silicon (c-Si) solar cells are reaching their practical efficiency limit whereas perovskite/c-Si tandem solar cells have achieved efficiencies above the theoretical limit of single junction c-Si solar cells. Next to low-thermal budget silicon heterojunction architecture, high-thermal budget carrier-selective passivating contacts (CSPCs) based on polycrystalline-SiO x (poly-SiO x ) also constitute a promising architecture for high efficiency perovskite/c-Si tandem solar cells. In this work, we present the development of c-Si bottom cells based on high temperature poly-SiO x CSPCs and demonstrate novel high efficiency four-terminal (4T) and two-terminal (2T) perovskite/c-Si tandem solar cells. First, we tuned the ultra-thin, thermally grown SiO x . Then we optimized the passivation properties of p-type and n-type doped poly-SiO x CSPCs. Here, we have optimized the p-type doped poly-SiO x CSPC on textured interfaces via a two-step annealing process. Finally, we integrated such bottom solar cells in both 4T and 2T tandems, achieving 28.1% and 23.2% conversion efficiency, respectively.
Single junction crystalline silicon (c-Si) solar cells are reaching
their practical efficiency limit while perovskite/c-Si tandem solar
cells have achieved efficiencies above the theoretical limit of single
junction c-Si solar cells. Next to low-thermal budget silicon
heterojunction architecture, high-thermal budget carrier-selective
passivating contacts (CSPCs) based on polycrystalline-SiO
(poly-SiO ) also constitute a
promising architecture for high efficiency perovskite/c-Si tandem solar
cells. In this work, we present the development of c-Si bottom cells
based on high-temperature poly-SiO CSPCs and
demonstrate novel high-efficiency four-terminal (4T) and two-terminal
(2T) perovskite/c-Si tandem solar cells. First, we tuned the ultra-thin,
thermally grown SiO . Then we optimized the passivation
properties of p-type and n-type doped poly-SiO CSPCs.
Here, we have optimized the p-type doped poly-SiO CSPC
on textured interfaces via a two-step annealing process. Finally, we
integrated such bottom solar cells in both 4T and 2T tandems, achieving
28.1% and 23.2% conversion efficiency, respectively.
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