This research studies the effect of annealing in temperature range (300-600)°C on nano-topography of SiO 2 film. SiO 2 nano film growth on Si (100) p-type substrates, by using the anodic oxidation technique using (%75H 2 O+%25 isopropanol) solution containing 0.1N KNO 3 as supporting electrolyte and applied potential is 5 volts. The chemical analysis of the surface of SiO 2 has been done by (EDAX) shows the presence of O and Si elements. (AFM) is used to study the nanotopography of SiO 2 nano film. However, it has been found that all of the following characteristics, root mean square RMS surface roughness of the SiO 2 film, grain area, grain volume and grain length increase with the increase of annealing temperature.
Abstr-brief overview of the different phenomena and problems which occur during laser surface alloying is presented in this study, for example the physical description of the different stages (melting, interdiffusion, solidification); attention is payed on limitations (especiallly concerning the realization of thick and strongly alloyed surface layers).
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