Herein, we present the synthesis of CsPbBr 3 quantum dots (QDs) by a ligand-assisted reprecipitation (LARP) technique under an ambient atmosphere. Besides, the optoelectronic properties of CsPbBr 3 QDs were improved through antimony tribromide (SbBr 3 ) post-treatment. Photoluminescence quantum yield (PLQY) was enhanced from 72 to 89% for SbBr 3 post-treated QDs compared to as-synthesized QDs. High-resolution transmission electron microscopy (HR-TEM) analysis shows the formation of uniform-size CsPbBr 3 QDs (9.4 ± 1.3 nm) after SbBr 3 treatment. The X-ray diffraction (XRD) pattern confirms the presence of the cubic phase of CsPbBr 3 QDs before and post-treatment. Moreover, temperature-dependent PL and X-ray photoelectron spectroscopy (XPS) characterizations confirm the effective defect passivation with SbBr 3 post-treatment. The timeresolved PL lifetime of CsPbBr 3 QDs was enhanced from 24.80 ± 0.10 to 37.71 ± 0.09 ns after post-treatment. Finally, the posttreated QD-based self-powered photodetector device showed a high responsivity of 48.1 μA/W compared to the as-synthesized QD device's responsivity of 10.2 μA/W.

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