Abstract-In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Computein-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer Torque Magnetic RAM (STT-MRAM). The unique properties of spintronic memory allow multiple wordlines within an array to be simultaneously enabled, opening up the possibility of directly sensing functions of the values stored in multiple rows using a single access. We propose modifications to STT-MRAM peripheral circuits that leverage this principle to perform logic, arithmetic and complex vector operations. We address the challenge of reliable in-memory computing under process variations by extending ECC schemes to detect and correct errors that occur during CiM operations. We also address the question of how STT-CiM should be integrated within a generalpurpose computing system. To this end, we propose architectural enhancements to processor instruction sets and on-chip buses that enable STT-CiM to be utilized as a scratchpad memory. Finally, we present data mapping techniques to increase the effectiveness of STT-CiM. We evaluate STT-CiM using a device-to-architecture modeling framework, and integrate cycle-accurate models of STT-CiM with a commercial processor and on-chip bus (Nios II and Avalon from Intel). Our system-level evaluation shows that STT-CiM provides system-level performance improvements of 3.93x on average (upto 10.4x), and concurrently reduces memory system energy by 3.83x on average (upto 12.4x).

Spintronic memories are promising candidates for future on-chip storage due to their high density, non-volatility and near-zero leakage. However, the energy consumed by read and write operations presents a major challenge to their use as energy-e cient on-chip memory. Leveraging the ability of many applications to tolerate impreciseness in their underlying computations and data, we explore approximate storage as a new approach to improving the energye ciency of spintronic memories. We identify and characterize mechanisms in STT-MRAM bit-cells that provide favorable energyquality trade-o↵s, i.e., disproportionate energy improvements at the cost of small probabilities of read/write failures. Based on these mechanisms, we design a quality-configurable memory array in which data can be stored to varying levels of accuracy based on application requirements. We integrate the quality-configurable array as a scratchpad in the memory hierarchy of a programmable vector processor and expose it to software by introducing qualityaware load/store instructions within the ISA. We evaluate the energy benefits of our proposal using a device-to-architecture modeling framework and demonstrate 40% and 19.5% improvement in memory energy and overall application energy respectively, for negligible (< 0.5%) quality loss across a suite of recognition and vision applications.

No abstract

No abstract

No abstract

No abstract

No abstract

No abstract