Graphene is a very attractive material for broadband photodetection in hyperspectral imaging and sensing systems. However, its potential use has been hindered by tradeoffs between the responsivity, bandwidth, and operation speed of existing graphene photodetectors. Here, we present engineered photoconductive nanostructures based on gold-patched graphene nano-stripes, which enable simultaneous broadband and ultrafast photodetection with high responsivity. These nanostructures merge the advantages of broadband optical absorption, ultrafast photocarrier transport, and carrier multiplication within graphene nano-stripes with the ultrafast transport of photocarriers to gold patches before recombination. Through this approach, high-responsivity operation is realized without the use of bandwidth-limiting and speed-limiting quantum dots, defect states, or tunneling barriers. We demonstrate high-responsivity photodetection from the visible to infrared regime (0.6 A/W at 0.8 μm and 11.5 A/W at 20 μm), with operation speeds exceeding 50 GHz. Our results demonstrate improvement of the response times by more than seven orders of magnitude and an increase in bandwidths of one order of magnitude compared to those of higher-responsivity graphene photodetectors based on quantum dots and tunneling barriers.

Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert damping and the absence of Ohmic loss. Spin-orbit torques (SOTs) on MIs are more intriguing than magnetic metals since SOTs cannot be transferred to MIs through direct injection of electron spins. Understanding of SOTs on MIs remains elusive, especially how SOTs scale with the MI film thickness. Here, we observe the critical role of dimensionality on the SOT efficiency by studying the MI layer thickness-dependent SOT efficiency in tungsten/thulium iron garnet (W/TmIG) bilayers. We show that the TmIG thin film evolves from two-dimensional to three-dimensional magnetic phase transitions as the thickness increases. We report the significant enhancement of the measured SOT efficiency as the TmIG thickness increases, which is attributed to the increase of the magnetic moment density. We demonstrate the current-induced SOT switching in the W/TmIG bilayers with a TmIG thickness up to 15 nm.

An inductively coupled plasma (ICP) process was used to synthesize transition metal dichalcogenides (TMDs) through a plasma-assisted selenization process of metal oxide (MO x ) at a temperature as low as 250 °C. In comparison with other CVD processes, the use of ICP facilitates the decomposition of the precursors at low temperatures. Therefore, the temperature required for the formation of TMDs can be drastically reduced. WSe 2 was chosen as a model material system due to its technological importance as a p-type inorganic semiconductor with an excellent hole mobility. Large-area synthesis of WSe 2 on polyimide (30 × 40 cm 2 ) flexible substrates and 8 in. silicon wafers with good uniformity was demonstrated at the formation temperature of 250 °C confirmed by Raman and X-ray photoelectron (XPS) spectroscopy. Furthermore, by controlling different H 2 /N 2 ratios, hybrid WO x /WSe 2 films can be formed at the formation temperature of 250 °C confirmed by TEM and XPS. Remarkably, hybrid films composed of partially reduced WO x and small domains of WSe 2 with a thickness of ∼5 nm show a sensitivity of 20% at 25 ppb at room temperature, and an estimated detection limit of 0.3 ppb with a S/N > 10 for the potential development of a low-cost plastic/wearable sensor with high sensitivity.

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications.

We study the magnetic properties of W/Co 40 Fe 40 B 20 (CoFeB)/MgO films using the spin-torque ferromagnetic resonance (ST-FMR) technique. This study takes the advantage of the spin Hall magnetoresistance (SMR) for generating an oscillating resistance, which is one of the necessary requirements for obtaining mixing voltage in the ST-FMR technique. We have measured both the as-grown and the annealed samples with different CoFeB layer thicknesses, which include the in-plane and out-of-plane magnetic anisotropies. The spectra for these two types of anisotropies show distinct signatures. By analyzing the ST-FMR spectra, we extract the effective anisotropy field for both types of samples. In addition, we investigate the influence of CoFeB thickness and annealing on the Gilbert damping constant. Our experiments show that by taking advantage of SMR, the ST-FMR measurement acts as an effective tool with high sensitivity for studying the magnetic properties of ultrathin magnetic films.