In this study, the electrically driven perovskite light-emitting diodes (PeLEDs) were investigated by hybridizing the organic polyethylene oxide, 1,3,5-tris (N-phenylbenzimiazole-2-yl) benzene (TPBi), and bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) with CsPbBr3 in the emission layer and adopting the colloidal NiOx nanoparticle (NP) hole transport layer. The synthesized NiOx NPs, having an average size of ~5 nm, can be spin-coated to become a smooth and close-packed film on the indium–tin–oxide anode. The NiOx NP layer possesses an overall transmittance of ~80% at 520 nm, which is about the peak position of electroluminescence (EL) spectra of CsPbBr3 emission layer. The coating procedures of NiOx NP and CsPbBr3 layers were carried out in ambient air. The novel PeLED turned on at 2.4 V and emitted bright EL of 4456 cd/m2 at 7 V, indicating the remarkable nonradiative-related defect elimination by organic additive addition and significant charge balance achieved by the NiOx NP layer.
In this study, facile synthesis, characterization, and stability tests of highly luminescent Zn-doped CsPbBr3 perovskite nanocrystals (NCs) were demonstrated. The doping procedure was performed via partial replacement of PbBr2 with ZnBr2 in the precursor solution. Via Zn-doping, the photoluminescence quantum yield (PLQY) of the NCs was increased from 41.3% to 82.9%, with a blue-shifted peak at 503.7 nm and narrower spectral width of 18.7 nm which was consistent with the highly uniform size distribution of NCs observed from the TEM image. In the water-resistance stability test, the doped NCs exhibited an extended period-over four days until complete decomposition, under the harsh circumstances of hexane-ethanol-water mixing solution. The Zn-doped NC film maintained its 94% photoluminescence (PL) intensity after undergoing a heating/cooling cycle, surpassing the un-doped NC film with only 67% PL remaining. Based on our demonstrations, the in-situ Zn-doping procedure for the synthesis of CsPbBr3 NCs could be a promising strategy toward robust and PL-efficient nanomaterial to pave the way for realizing practical optoelectronic devices.
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