In this study, the CuInS
2
/ZnS core/shell quantum dots (QDs) were prepared via simple and environmentally friendly solvothermal synthesis and were used as phosphors for white light-emitting diodes (WLEDs). The surface defect of the CuInS
2
core QDs were passivated by the ZnS shell by forming CuInS
2
/ZnS core/shell QDs. By adjusting the Cu/In ratio and the nucleation temperature, the photoluminescence (PL) peak of the CuInS
2
QDs was tunable in a range of 651–775 nm. After coating the ZnS layer and modifying oleic acid ligands, the PL quantum yield increased to 85.06%. The CuInS
2
/ZnS QD powder thermal stability results showed that the PL intensity of the QDs remained 91% at 100°C for 10 min. High color rendering index values (CRI, 90) and correlated color temperature of 4360 K for the efficient WLEDs were fabricated using CuInS
2
/ZnS QDs and (Ba,Sr)
2
SiO
4
:Eu
2+
as color converters in combination with a blue GaN light-emitting diode chip.
A study of hybrid ZnCdSeS/ZnS quantum dot light-emitting diodes (QLEDs) device fabricated with indium tin oxide-free transparent electrodes is presented. Al-doped zinc oxide (AZO) prepared by magnetron sputtering is adopted in anode transparent electrodes for green QLEDs with different sputtering pressures. A Kelvin probe force microscopy measurement showed that AZO has a work function of approximately 5.0 eV. The AZO/poly(ethylene-dioxythiophene)/polystyrenesulfonate (PEDOT:PSS) interface can be adjusted by the sputtering pressures, which was confirmed by hole-only devices. AZO films with low surface roughness can form a good AZO/PEDOT:PSS interface, which can increase the holes’ injection, and result in an improved charge balance. The maximum current efficiency, luminance, and external quantum efficiency of the optimized QLED devices under a sputtering pressure of 1 mTorr can achieve values of 50.75 cd A−1, 102 500 cd m−2, and 12.94%, respectively.
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