We present the development of quantum dot microdisk resonators grown by Chemical Beam Epitaxy (CBE). Two stacked layers of InAs Quantum Dots (QDs) embedded in a lattice-matched InGaAsP ( g =1.4 m) are grown on (100) InP substrate. Evidence of the presence of resonant modes are observed both by eletroluminescense and absorption spectra at room temperature.
We report an enhanced side-mode suppression in Bunimovich stadium lasers with strained InGaAs/InGaP quantum well (QW) active regions. This is realized with spatially selective carrier injection along a particular periodic orbit of the stadium. The selectivity is achieved using He+3 ion implantation. Up to 21 dB enhancement in side-mode suppression is observed for a 40×20 μm2 stadium with interband transition between the first excited quantum well level. The improvement in side-mode suppression is apparently a consequence of coherent beating between orbits leading to a Vernier effect. A simple model corroborate with this hypothesis.
High k insulators for the next generation (sub-32 nm CMOS (complementary metal-oxide-semiconductor) technology), such as titanium-aluminum oxynitride (Ti w Al x O y N z ) and titaniumaluminum oxide (Ti w Al x O y ), have been obtained by Ti/Al e-beam evaporation, with additional electron cyclotron resonance (ECR) plasma oxynitridation and oxidation on Si substrates, respectively. The physical thickness values between 5.7 nm and 6.3 nm were determined by ellipsometry. These films have been used as gate insulators in MOS capacitors, which were fabricated with Al electrodes and final sintering time at 450 0 C for 10 min in forming gas. These capacitors were used to obtain capacitance-voltage (C-V) measurements. A relative dielectric constant of 3.9 was adopted to extract the Equivalent Oxide Thickness of films from C-V curves under strong accumulation condition, resulting in values between 1.9 and 1.7 nm, and the effective charge densities of about 10 11 cm -2 . These results indicate that the obtained
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