It is established by ellipsometric measurements that the interaction process of a sheared surface of single-crystal cadmium telluride with atmospheric air has two stages. In the first 7-10 days, the character of the change of the measured ellipsometric parameters corresponds to the formation of an absorbing layer with a thickness of one or two monatomic layers. Beginning at 20 days, a transparent film appears, possibly an oxide, whose refractive index is close to 2.2, while the thickness increases to 5-6 nm in an oxidation time of up to 1 year. Starting from literature data, it is assumed that the inner film is a layer of free tellurium, while the outer film is formed by cadmium or tellurium oxides or a mixture of them.
The kinetics of charge carriers in bilateral macroporous silicon with macroporous layers of equal thicknesses is calculated by the finite difference method. A diffusion equation for a monocrystalline substrate and macroporous layers is solved. The boundary conditions are defined at the boundaries between the monocrystalline substrate and the macroporous silicon layers on both sides. Stationary distribution of excess charge carriers in the bilateral macroporous silicon with the macroporous layers of equal thicknesses calculated by the finite difference method is set as the initial condition. Under stationary conditions, excess charge carriers are generated by light with the wavelengths of 0.95 µm and 1.05 µm. It is shown that at the counting times much longer than the relaxation time, all the distributions of the concentration of excess minority carriers generated by light with any wavelength approach the same distribution with exponentially decreasing value.
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