In the present work, thin ZnO layers were synthesized by the sol-gel method with subsequent spin-coating on Si(100). We show that the detailed analysis of lab-recorded photoemission spectra in combination with Kelvin probe data yielded the work function, ionization energy, and valence band - Fermi level separation - and hence enabled the construction of band diagrams of the examined layers. With small modifications in preparation, very different films can be obtained. One set shows a homogeneous depth-dependent n carrier distribution, and another a significant carrier concentration gradient from n-type conductivity to almost metal-like n(+) character. Likewise, the surface morphology can be tuned from a uniform, compact surface with spherical single-nm sized grain-like features to a structured surface with 5-10 nm tall crystallites with (002) dominating crystal orientation. Based on the band-bending and the energy levels observed, defects of contradictory nature, i.e. acceptor-donor-trap (ADT) properties, were identified. These defects may be groups of point defects, with opposite character. The ADT states affect the energy levels of the oxide layers and due to their nature cannot be considered in the photoemission experiment as mutually independent. The versatile nature of the synthesis provides us with the opportunity to tune the properties with a high degree of freedom, at low processing costs, yielding layers with an exotic electronic structure. Such layers are interesting candidates for applications in photovoltaic and nanoelectronic devices.
The presence of occupied intra-band gap states in oxygen-deficient tin dioxide (SnOx; 1 < x < 2) is crucial for efficient manufacturing of multipurpose electronic devices based on transparent conducting oxides. Former experimental determination of these states was conducted for well-defined, usually thick tin oxides obtained under highly controlled vacuum conditions. In this work, we present precise specification of gap defects states for ultra-thin SnOx layers prepared by sol-gel synthesis followed with spin-coat deposition. Post-deposition drying and annealing processing changed layers’ surface morphology and bulk crystalline structure as monitored by scanning electron microscopy, atomic force microscopy and x-ray diffraction. An x-ray photoemission spectroscopy (XPS) analysis of chemical composition revealed the presence of both Sn2+ and Sn4+ species in layers with and without post-drying annealing step. A stronger contribution of SnO was found for dried SnOx. In the valence band region, XPS studies revealed pronounced O 2p and hybridised Sn 5p/5s–O 2p states as well as deep, overlapping with the O 2p, band gap states resulting from Sn 5s orbitals. These states—attributed to defect states—indicated enhanced presence of Sn2+ cations, and were assigned to ‘bridging’ oxygen vacancies. Complementary photoemission yield spectroscopy (PYS) studies of the SnOx band gap region revealed an increased effective density of occupied electronic states below the Fermi level EF for annealed layers. The consequence was a work function reduction by 0.15 eV after the annealing process. PYS results allowed a precise detection of SnOx shallow band gap states close to EF. These states were attributed to surface oxygen vacancies, which was confirmed by computer modelling. Finally, the annealed layers exhibited higher calculated charge carrier concentration, hence the increased n-type character.
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