In nature, electrical signalling occurs with ions and protons, rather than electrons. Artificial devices that can control and monitor ionic and protonic currents are thus an ideal means for interfacing with biological systems. Here we report the first demonstration of a biopolymer protonic field-effect transistor with proton-transparent PdH x contacts. In maleic-chitosan nanofibres, the flow of protonic current is turned on or off by an electrostatic potential applied to a gate electrode. The protons move along the hydrated maleic-chitosan hydrogen-bond network with a mobility of ~4. . This study introduces a new class of biocompatible solid-state devices, which can control and monitor the flow of protonic current. This represents a step towards bionanoprotonics.

Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H+ hop along chains of hydrogen bonds between water molecules and hydrophilic residues – proton wires. These wires also support the transport of OH− as proton holes. Discriminating between H+ and OH− transport has been elusive. Here, H+ and OH− transport is achieved in polysaccharide- based proton wires and devices. A H+- OH− junction with rectifying behaviour and H+-type and OH−-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H+ and OH− to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems.

We introduce a simplified fabrication technique for Josephson junctions and demonstrate superconducting Xmon qubits with T 1 relaxation times averaging above 50 ls (Q > 1:5 Â 10 6 ). Current shadow-evaporation techniques for aluminum-based Josephson junctions require a separate lithography step to deposit a patch that makes a galvanic, superconducting connection between the junction electrodes and the circuit wiring layer. The patch connection eliminates parasitic junctions, which otherwise contribute significantly to dielectric loss. In our patch-integrated cross-type junction technique, we use one lithography step and one vacuum cycle to evaporate both the junction electrodes and the patch. This eliminates a key bottleneck in manufacturing superconducting qubits by reducing the fabrication time and cost. In a study of more than 3600 junctions, we show an average resistance variation of 3.7% on a wafer that contains forty 0:5 Â 0:5-cm 2 chips, with junction areas ranging between 0.01 and 0.16 lm 2 . The average on-chip spread in resistance is 2.7%, with 20 chips varying between 1.4% and 2%. For the junction sizes used for transmon qubits, we deduce a wafer-level transition-frequency variation of 1.7%-2.5%. We show that 60%-70% of this variation is attributed to junction-area fluctuations, while the rest is caused by tunnel-junction inhomogeneity. Such high frequency predictability is a requirement for scaling-up the number of qubits in a quantum computer.

We describe an experimental protocol to characterize magnetic field dependent microwave losses in superconducting niobium microstrip resonators. Our approach provides a unified view that covers two well-known magnetic field dependent loss mechanisms: quasiparticle generation and vortex motion. We find that quasiparticle generation is the dominant loss mechanism for parallel magnetic fields. For perpendicular fields, the dominant loss mechanism is vortex motion or switches from quasiparticle generation to vortex motion, depending on cooling procedures. In particular, we introduce a plot of the quality factor versus the resonance frequency as a general method for identifying the dominant loss mechanism. We calculate the expected resonance frequency and the quality factor as a function of the magnetic field by modeling the complex resistivity. Key parameters characterizing microwave loss are estimated from comparisons of the observed and expected resonator properties. Based on these key parameters, we find a niobium resonator whose thickness is similar to its penetration depth is the best choice for X-band electron spin resonance applications. Finally, we detect partial release of the Meissner current at the vortex penetration field, suggesting that the interaction between vortices and the Meissner current near the edges is essential to understand the magnetic field dependence of the resonator properties.

We present a comprehensive study of internal quality factors in superconducting stubgeometry 3-dimensional cavities made of aluminum. We use wet etching, annealing and electrochemichal polishing to improve the as machined quality factor. We find that the dominant loss channel is split between two-level system loss and an unknown source with 60:40 proportion. A total of 17 cavities of different purity, resonance frequency and size were studied. Our treatment results in reproducible cavities, with ten of them showing internal quality factors above 80 million at a power corresponding to an average of a single photon in the cavity. The best cavity has an internal quality factor of 115 million at single photon level.