This paper presents an overview of the literature on union commitment. The aim is to survey the main approaches, findings and implications of the research. The nature and dimensionality of union commitment are examined, and the antecedents and consequences of union commitment are discussed in detail, including a review of the implications for union participation. There is also a discussion of the possibility of dual commitment to union and employer, and of the`multiple constituencies' view of commitment. An attempt is made to link the union commitment findings to the wider industrial relations literature on, for example, why people join unions and the`union renewal' thesis. The article concludes by discussing the implications of the literature for union±management relationships and for unions themselves, and with some suggestions for future research.

A three-component reaction for 1,2-amino oxygenation of 1,3-dienes has been achieved using Oacyl hydroxylamines and carboxylic acids. The reaction occurs through copper-catalyzed amination of olefins followed by nucleophilic addition of carboxylic acids, offering high levels of chemo-, regio-, and site-selectivity. The method is effective for both terminal and internal 1,3dienes, including those bearing multiple, unsymmetrical substituents. The amino oxygenation conditions also exhibited remarkable selectivity toward 1,3-dienes over alkenes, good tolerance of sensitive functional groups, and reliable scalability.

Copper-catalyzed alkene amino oxygenation reactions using O-acylhydroxylamines have been achieved for a rapid and modular access to diverse 1,2-amino oxygen-containing molecules. This transformation is applicable to the use of alcohols, carbonyls, oximes and thio-carboxylic acids as nucleophiles on both terminal and internal alkenes. Mild reaction conditions tolerate a wide range of functional groups, including ether, ester, amide, carbamate, and halide. The reaction protocol allows for starting with free amines as the precursor of O-benzoylhydroxylamines to eliminate their isolation and purification, contributing to broader synthetic utilities. Mechanistic investigations reveal the amino oxygenation reactions may involve distinct pathways, depending on different oxygen nucleophiles.

Measured results of V MlN from 20nm SRAM array s with read and write assist techniques are presented for multiple flavors of bit cell. A novel assist technique is presented, that provides both read and write assist by controlling only the voltage of word line (WL) and without using a separate supply voltage. The WL-drivers use a WL float technique to reduce the dc-path current compared to existing WL under-drive read assist designs.The assist technique resulted in a VMlN improvement of 143mV for the high-density 6T (6T-HD) SRAM, 96mV for the high-speed 6T (6T-HS) SRAM, and 86mV for the 8T dual-port (DP) SRAM. I ntroductionThe traditional 6T SRAM is still the most attractive bitcell option as it offers the highest density, uses a single wordline, and generates differential bitlines. Unfortunately, operating SRAMs at lower voltages is becoming extremely challenging and requires several assist techniques to improve cell stability and writability and push the lowest voltage of operation (V MlN) [1]-[7]. This work presents a novel read and write assist (RWA) technique by controlling only the WL voltage and without using a separate supply voltage. The technique described in [4] is conceptually similar, but has significant timing penalty, especially for instances in worst case comer for read stability (FS: fast-N, slow-P) (Fig. 3). A novel WL float technique is used in this work that improves dc-path current over existing WL under-drive techniques [1],[2],[5],[7]. Measured results of VMlN from SRAM arrays built in 20nmbulk CMOS are presented. The arrays are built in a variety of sizes and using several bitcell options (6T-HD, 6T-HS, and DP). The SRAMs can be configured, using external pins, in the no-assist (NA) mode, the RWA mode or either of the read-assist only (RA) or write-assist only (WA) modes.These techniques are built as bolt-on options to the regular SRAM design to maximize design reuse and minimize design cycle time. Assist Techniques DesignThe assist circuitry and the simplified waveforms are shown in Fig.1 and Fig. 2 respectively. The read cycle of RW A mode consists of two intervals. In the first interval (TI), the WL is under-driven and is raised to a full VDD in the second interval (T2), alleviating the speed degradation due to the conventional WL under-drive [1][5]. The partial discharge of BL during TI results in a lowered read-bump during T2, and hence increases the read stability. The write cycle consists of 3 intervals. The first is identical to that of the read cycle and ensures that the half-selected bitcells (i.e., the non-accessed bitcel1s in the selected WL) are not read disturbed. The WL is raised to VDD in the second interval (T2) before providing it with a boost in the final interval. The boost strengthens the access devices and improves the chances to overcome the drive strength of the pull-up device within the cell, thus resulting in a successful write. The WL under-drive voltage is determined by the drive strength ratio of header PMOS (Pheader) and the footer device(s). The default footer...

No abstract