Temporal analysis of both the photorefractive mechanism and soliton propagation in a slab semiconductor waveguide is presented. As an example, a structure based on GaAs/AlGaAs MQWs was investigated. Both a numerical and simple analytical approach based on the bipolar band-transport model is used to derive a temporal photorefractive response on localized illumination. The corresponding propagation problem describing the evolution of screening soliton profiles in media with quadratic electro-optic effect was also discussed.
This article analyzes nonlinear light propagation in semiconductors with bipolar conductivity and nonlinear transport of electrons. We show how the competition between electron and hole conductivity can influence light propagation, leading to the self-bending effect of optical beam trajectory, which depending on the value of trap compensation coefficient may be stationary or transient.
Nonlinear light propagation in photorefractive media can be analyzed by numerical methods. The presented numerical approach has regard to the effects of time nonlocality. Two algorithms are presented, and compared in terms of physical results and computing times. The possibility to address the issue of time nonlocality in two ways is attributed to the fact that, it is possible to completely separate carrier dynamics evaluation and wave equation calculation. This in turn, allows to choose a short integration time for carrier dynamics and a longer one to solve the wave equation. The tests of the methods were carried out for a one-carrier model that describes most of photorefractive media, and for a model with bipolar transport and hot electron effect, used in descriptions of semiconductor materials.
A general approach to the approximate analytical solution of photorefractive transport
equations for arbitrary fringe contrast is presented. The method based partially on the
perturbative scheme permits us to find the stationary space–charge field distribution inside
a photorefractive crystal for a two-wave mixing (TWM) geometry with a DC electric field.
The method can be employed for various band transport models. In the present
work two distinct electron–hole conduction models are investigated. The solutions
are compared with the results of numerical calculations and good agreement is
found.
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