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High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) is a powerful tool to quantify size, shape, position, and composition of nano-objects with the assessment of image simulation. Due to the high computational requirements needed, nowadays it can only be applied to a few unit cells in standard computers. To overpass this limitation, a parallel software (SICSTEM) has been developed. This software can afford HAADF-STEM image simulations of nanostructures composed of several hundred thousand atoms in manageable time. The usefulness of this tool is exemplified by simulating a HAADF-STEM image of an InAs nanowire.

In this paper a technique to design three dimensional (3D) devices to focus acoustic waves composed of scattering elements is proposed. The devices are designed and optimized in two dimensions (2D) with the help of a genetic algorithm and the 2D multiple scattering formalism. The transition from 2D to 3D is made by applying a rotation operation to the optimized design, thus passing from a set of 2D circular scatters to their equivalent 3D concentric rings of circular section and finite dimensions, considerably improving its performance. The method has been applied to the design and theoretical characterization of a single-focus acoustic lens and a tunable lens capable of changing the focal length with frequency. A prototype lens was fabricated using aluminum rings clamped to a rigid frame, obtaining a good agreement between theory and experiment.

In this article a method for determining errors of the strain values when applying strain mapping techniques has been devised. This methodology starts with the generation of a thickness/defocus series of simulated high-resolution transmission electron microscopy images of InAsxP1-x/InP heterostructures and the application of geometric phase. To obtain optimal defocusing conditions, a comparison of different defocus values is carried out by the calculation of the strain profile standard deviations among different specimen thicknesses. Finally, based on the analogy of real state strain to a step response, a characterization of strain mapping error near an interface is proposed.

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