is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible. The thermal conductivity of Ge 2 Sb 2 Te 5 ͑GST͒ layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO 2 , was measured using a photothermal radiometry experiment. The two phase changes in the Ge 2 Sb 2 Te 5 were retrieved, starting from the amorphous and sweeping to the face centered cubic ͑fcc͒ crystalline state at 130°C and then to the hexagonal crystalline phase ͑hcp͒ at 310°C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO 2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.
ABSTRACT:The study describes significant outcomes of the 'Metrology for Meteorology' project, MeteoMet, which is an attempt to bridge the meteorological and metrological communities. The concept of traceability, an idea used in both fields but with a subtle difference in meaning, is at the heart of the project. For meteorology, a traceable measurement is the one that can be traced back to a particular instrument, time and location. From a metrological perspective, traceability further implies that the measurement can be traced back to a primary realization of the quantity being measured in terms of the base units of the International System of Units, the SI. These two perspectives reflect long-standing differences in culture and practice and this project -and this study -represents only the first step towards better communication between the two communities. The 3 year MeteoMet project was funded by the European Metrology Research Program (EMRP) and involved 18 European National Metrological Institutes, 3 universities and 35 collaborating stakeholders including national meteorology organizations, research institutes, universities, associations and instrument companies. The project brought a metrological perspective to several long-standing measurement problems in meteorology and climatology, varying from conventional ground-based measurements to those made in the upper atmosphere. It included development and testing of novel instrumentation as well as improved calibration procedures and facilities, instrument intercomparison under realistic conditions and best practice dissemination. Additionally, the validation of historical temperature data series with respect to measurement uncertainties and a methodology for recalculation of the values were included.
grown by atomic layer deposition could be proposed as a nonactive layer for back end processes in view of the integration of scaled phase change memory devices. In this paper we report on thermal characterization from 50 to 600°C of amorphous Al 2 O 3 thin films grown on thermally oxidized silicon substrate at a temperature of 100°C and capped with a 30 nm thick Pt layer. The effects of low temperature deposition and of a post-deposition rapid thermal annealing process (RTP) on the thermal properties of the films are investigated using a modulated photo-thermal radiometry technique coupled with post-annealing morphological characterizations. Degassing process occurring at high temperature greatly affects the film surface quality, though measurements of the films after RTP show that the thermal conductivity of amorphous Al 2 O 3 increases as a function of temperature from 1.8 W K À1 m À1 at 50°C to 3.3 W K À1 m À1 at 600°C. At the same time, the value of the thermal boundary resistance at the Pt-Al 2 O 3 interface decreases from 1.02 Â 10 À7 K m 2 W À1 at 50°C to 4.8 Â 10 À8 K m 2 W À1 at 600°C.
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