We report on magnetic and structural properties of n-and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N 2 atmosphere at a constant temperature in the range between 700 and 1050°C. Measurements of the magnetization as a function of magnetic field as well as of the temperature show typical paramagnetic behavior. In addition, a weak antiferromagnetic coupling between the implanted ions was observed. 3d-metal rich precipitates of crystalline nature are revealed by high resolution transmission electron microscopy.
We report on magnetic properties of the GaN layers implanted with 3d transition metal ions. GaN layers grown by MOVPE on sapphire substrates, p- or n-doped, were implanted by Mn, Cr or V ions with a dose of 5×1016 cm−2 and implantation energy of 200 keV. Subsequently, a rapid thermal annealing in nitrogen atmosphere for 5 minutes at different temperatures (700°C – 1050°C) was performed. The magnetization as a function of magnetic field as well as the dependence on temperature revealed paramagnetic behavior for all samples. In addition, an antiferromagnetic coupling between implanted ions was found.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.