The mechanism of the formation of Si-C bonded monolayers on silicon by reaction of 1-alkenes with hydrogen-terminated porous silicon surfaces has been studied by both experimental and computational means. We propose that monolayer formation occurs via the same radical chain process as at single-crystal surfaces: a silyl radical attacks the 1-alkene to form both the Si-C bond and a radical center on the beta-carbon atom. This carbon radical may then abstract a hydrogen atom from a neighboring Si-H bond to propagate the chain. Highly deuterated porous silicon and FTIR spectroscopy were used to provide evidence for this mechanism by identifying the IR bands associated with the C-D bond formed in the proposed propagation step. Deuterated porous silicon surfaces formed by galvanostatic etching in 48% DF/D2O:EtOD (1:1) electrolytes showed a 30% greater density of Si-D sites on the surface than Si-H sites on hydrogen-terminated porous silicon surfaces prepared in the equivalent H-electrolyte. The thermal reaction of undec-1-ene and the Lewis acid catalyzed reaction of styrene on a deuterated surface both resulted in alkylated surfaces with the same C-C and C-H vibrational features as formed in the corresponding reactions at a hydrogen-terminated surface. However, a broad band around 2100 cm(-1) was observed upon alkylating the deuterated surfaces. Ab initio and density functional theory calculations on small molecule models showed that the integrated absorbance of this band was comparable to the intensity expected for the C-D stretches predicted by the chain mechanism. The calculations also indicate that there is substantial interaction between the hydrogen atoms on the beta-carbons and the hydrogen atoms on the Si(111)-H surface. These broad 2100 cm(-1) features are therefore assigned to C-D bands arising from the involvement of surface D atoms in the hydrosilylation reactions, while the line broadening can be explained partly by interaction with neighboring surface atoms/groups.

We have analyzed a kinetic model for the formation of organic monolayers based on a previously suggested free radical chain mechanism for the reaction of unsaturated molecules with hydrogen-terminated silicon surfaces (Linford, M. R.; Fenter, P. M.; Chidsey, C. E. D. J. Am. Chem. Soc 1995, 117, 3145). A direct consequence of this mechanism is the nonexponential growth of the monolayer, and this has been observed spectroscopically. In the model, the initiation of silyl radicals on the surface is pseudo first order with rate constant, ki, and the rate of propagation is determined by the concentration of radicals and unreacted Si-H nearest neighbor sites with a rate constant, kp. This propagation step determines the rate at which the monolayer forms by addition of alkene molecules to form a track of molecules that constitute a self-avoiding random walk on the surface. The initiation step describes how frequently new random walks commence. A termination step by which the radicals are destroyed is also included. The solution of the kinetic equations yields the fraction of alkylated surface sites and the mean length of the random walks as a function of time. In mean-field approximation we show that (1) the average length of the random walk is proportional to (kp/ki)1/2, (2) the monolayer surface coverage grows exponentially only after an induction period, (3) the effective first-order rate constant describing the growth of the monolayer and the induction period (kt) is k = (2ki kp)1/2, (4) at long times the effective first-order rate constant drops to ki, and (5) the overall activation energy for the growth kinetics is the mean of the activation energies for the initiation and propagation steps. Monte Carlo simulations of the mechanism produce qualitatively similar kinetic plots, but the mean random walk length (and effective rate constant) is overestimated by the mean field approximation and when kp >> ki, we find k approximately ki0.7kp0.3 and Ea = (0.7Ei+ 0.3Ep). However the most striking prediction of the Monte Carlo simulations is that at long times, t >> 1/k, the effective first-order rate constant decreases to ki even in the absence of a chemical termination step. Experimental kinetic data for the reaction of undec-1-ene with hydrogen-terminated porous silicon under thermal reflux in toluene and ethylbenzene gave a value of k = 0.06 min(-1) and an activation energy of 107 kJ mol(-1). The activation energy is in reasonable agreement with density functional calculations of the transition state energies for the initiation and propagation steps.

Resonant inelastic x-ray scattering (RIXS), x-ray absorption spectroscopy and x-ray excited optical luminescence (XEOL) have been used to measure element specific filled and empty electronic states over the Si L(2,3) edge of passivated Si nanocrystals of narrow size distribution (diameter 2.2 ± 0.4 nm). These techniques have been employed to directly measure absorption and luminescence specific to the local Si nanocrystal core. Profound changes occur in the absorption spectrum of the nanocrystals compared with bulk Si, and new features are observed in the nanocrystal RIXS. Clear signatures of core and valence band exciton formation, promoted by the spatial confinement of electrons and holes within the nanocrystals, are observed, together with band narrowing due to quantum confinement. XEOL at 12 K shows an extremely sharp feature at the threshold of orange luminescence (i.e., at ∼1.56 eV (792 nm)) which we attribute to recombination of valence excitons, providing a lower limit to the nanocrystal band gap.

Diazomethane reacts with hydrogen-terminated porous or single crystal silicon surfaces under irradiation with the 365 nm line from a mercury lamp. The surface Si-H x groups are lost and an HF-resistant, polymeric hydrocarbon species is formed. The mechanism is proposed to commence with insertion of singlet methylene into the Si-H bond as in the analogous reaction of molecular hydrosilanes. However, the infrared spectra indicate that -CH 2 -groups rather than terminal -CH 3 are dominant on the surface after reaction. This is attributed to an oligomerization which may proceed via attack of singlet methylene on C-H bonds or via a radical process. In the case of porous silicon, significant oxidation occurs in parallel to the reaction with diazomethane due to the presence of trace water from the reagents used to generate diazomethane. The oxidized silicon species can, however, be removed selectively by washing in aqueous 48% HF without affecting the integrated intensity of the C-H stretching bands observed by FTIR spectroscopy. In combination with an analysis of the IR spectroscopic data, we conclude that the hydrocarbon species on the surface are anchored via robust Si-C bonds rather than the labile Si-O-C linkage. This is further supported by the stability of diazomethane-treated, polished single crystal wafers to in-air STM and electrochemical cycling in aqueous media. The diazomethane treatment also shifts the flatband potential in a negative direction in aqueous NaCl compared to Si(111)-H surfaces.