Piranha treatment provides an ideal platform for the controlled growth of large-scale monolayer MoS2 on dielectric and semiconductor substrates for device applications.
In this study, we report the fabrication of quasi-aligned p-GaN nanowires (NWs) on n-Si (1 1 1) substrate by halide chemical vapour deposition (HCVD) using MgCl2 precursor and followed by low-energy electron beam irradiation to activate the Mg acceptor doping in GaN NWs. We aimed to attain a comprehensive understanding of p-doping in GaN NWs growth, extensive characterizations and fabrication of UV photodetector (PDs) based on p-GaN NWs/n-Si heterojunction. To realize the efficient UV photodetectors, we measure the current-voltage (I-V) characteristics of heterojunction PDs under dark and illuminated conditions and the I-V curve demonstrates good rectifying behaviours with 0.2 V turn-on voltage. At zero bias, the heterojunction PDs show a reverse photocurrent of 1.27 × 10-6 A with a very low dark current of 2.35 ×10-9 A under 325 nm UV illumination. Besides, the significance of the self-powered operation of UV PDs and the charge transfer mechanism are discussed with the aid of the energy band diagram. The substantial photocurrent increment with varying applied potential leads to narrowing the photo potential in the interface. The excitonic bound states present in p-GaN NWs/n-Si heterojunction is further elucidated. As a result, the heterojunction PDs demonstrate the high responsivity, detectivity, and external quantum efficiency of 134 mA W-1, 3.73 ×1013 Jones, and 51 % respectively, at 0.1 V low applied potential under the reverse bias condition. The proposed work provides an archetype for Mg doping in GaN NWs ensembles, which will help to facilitate the heterojunction with n-Si to unleash the potential of self-powered UV PDs.
The efficient charge separation and surface state reactions are significant in enhancing the efficiency of photoelectrochemical hydrogen evolution. Herein, we report a ternary heterostructure consisting of CdS/ZnSe sensitized TiO2 nanorod as a photoanode. The heterojunction photoanode considerably widens the photon absorption spectral range and thereby enhances the photocurrent density up to 2 mA/cm2 at 1.23 V versus RHE which is 10 times higher than pristine TiO2 photoanode. The photoelectrochemical results demonstrate a high photocurrent density of 2 mA/cm2 with a photon‐to‐current conversion efficiency of 1.5 % at a very low applied bias (0.2 V vs RHE). The improved PEC performances of the multidimensional hybrid photoanode could be ascribed to the efficient visible‐light absorption of ZnSe and CdS nanocrystals decorated on the surface of 1D TiO2. The rapid electron‐transfer properties owing to higher carrier density, low carrier transport resistance, and an extended lifetime of photoexcited carriers in the multidimensional ZnSe/CdS/TiO2 heterostructure with suppressed surface charge recombination are responsible for enhanced hydrogen evolution activities.
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