No abstract

No abstract

No abstract

No abstract

In this work, a simple cost-effective physical vapor deposition method for obtaining high-quality Bi 2 Se 3 and Sb 2 Te 3 ultrathin films with thicknesses down to 5 nm on mica, fused quartz, and monolayer graphene substrates is reported. Physical vapor deposition of continuous Sb 2 Te 3 ultrathin films with thicknesses 10 nm and below is demonstrated for the first time. Studies of thermoelectrical properties of synthesized Bi 2 Se 3 ultrathin films deposited on mica indicated opening of a hybridization gap in Bi 2 Se 3 ultrathin films with thicknesses below 6 nm. Both Bi 2 Se 3 and Sb 2 Te 3 ultrathin films showed the Seebeck coefficient and thermoelectrical power factors comparable with the parameters obtained for the highquality thin films grown by the molecular beam epitaxy method. Performance of the best Bi 2 Se 3 and Sb 2 Te 3 ultrathin films is tested in the two-leg prototype of a thermoelectric generator.

No abstract

No abstract

No abstract