Bistable resistive switching characteristics obtained using a supramolecular hybrid route to hydrogen-bonded block copolymers (BCP) and graphene oxide (GO) as charge storage materials are reported for write-once-read-many-times (WORM) memory devices.
A conjugated poly(fluorene-thiophene) donor and a tethered phenanthro[9,10-d]imidazole acceptor (PFT-PI) was used as the active layer in flexible nonvolatile resistor memory devices with low threshold voltages (±2 V), low switching powers (∼100 μW cm(-2)), large ON/OFF memory windows (10(4)), good retention (>10(4) s) and excellent endurance against electric and mechanical stimulus.
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