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Articles you may be interested inThe electronic structure changes and the origin of the enhanced optical properties in N-doped anatase TiO2-A theoretical revisitFirst-principles study of the electronic structure and optical properties of Ce-doped ZnO First principle calculations on electronic structure of Rare Earth ions Ce and Nd doped GaN are presented. Band gap narrowing, optical transitions, and hybridization of impurity states with the host are discussed. The dopants introduced 4f states in the band gap of the doped material in such a way that RE Ga isoelectronic traps facilitate the optical transitions in RE:GaN. The observed formation of intermediate bands and impurity levels in band gap of host material predicted it to be excellent candidate for the future solar cell generation and other optoelectronic devices. V C 2013 AIP Publishing LLC. [http://dx.

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