We show how to model the transition between distinct quantum Hall plateaus in terms of D-branes in string theory. A low energy theory of 2 + 1 dimensional fermions is obtained by considering the D3-D7 system, and the plateau transition corresponds to moving the branes through one another. We study the transition at strong coupling using gauge/gravity duality and the probe approximation. Strong coupling leads to a novel kind of plateau transition: at low temperatures the transition remains discontinuous due to the effects of dynamical symmetry breaking and mass generation, and at high temperatures is only partially smoothed out.

The magnetic brane solution to five-dimensional Einstein-Maxwell-Chern-Simons theory provides a holographic description of the RG flow from four-dimensional Yang-Mills theory in the presence of a constant magnetic field to a two-dimensional low energy CFT. We compute two-point correlators involving the U(1) current and the stress tensor, and use their leading IR behavior to confirm the existence of a single chiral current algebra, and of left-and right-moving Virasoro algebras in the low energy CFT. The common central charge of the Virasoro algebras is found to match the Brown-Henneaux formula, while the level of the current algebra is related to the Chern-Simons coupling. The coordinate reparametrizations produced by the Virasoro algebras on the AdS 3 near-horizon geometry arise from physical non-pure gauge modes in the asymptotic AdS 5 region, thereby providing a concrete example for the emergence of IR symmetries. Finally, we interpret the infinite series of sub-leading IR contributions to the correlators in terms of certain double-trace interactions generated by the RG flow in the low energy CFT.

We discuss aspects of holography in the AdS 3 ×S p near string geometry of a collection of straight fundamental heterotic strings. We use anomalies and symmetries to determine general features of the dual CFT. The symmetries suggest the appearance of nonlinear superconformal algebras, and we show how these arise in the framework of holographic renormalization methods. The nonlinear algebras imply intricate formulas for the central charge, and we show that in the bulk these correspond to an infinite series of quantum gravity corrections. We also makes some comments on the worldsheet σ-model for strings on AdS 3 × S 2 , which is the holographic dual geometry of parallel heterotic strings in five dimensions.

We report the optimized synthesis and electrochemical characterization of a composite of few-layered nanostructured MoS2 along with an electroactive metal oxide BiVO4. In comparison to pristine BiVO4, and a composite of graphene/BiVO4, the MoS2/BiVO4 nanocomposite provides impressive values of charge storage with longer discharge times and improved cycling stability. Specific capacitance values of 610 Fg−1 (170 mAhg−1) at 1 Ag−1 and 166 Fg−1 (46 mAhg−1) at 10 Ag−1 were obtained for just 2.5 wt% MoS2 loaded BiVO4. The results suggest that the explicitly synthesized small lateral-dimensioned MoS2 particles provide a notable capacitive component that helps augment the specific capacitance. We discuss the optimized synthesis of monoclinic BiVO4, and few-layered nanostructured MoS2. We report the discharge capacities and cycling performance of the MoS2/BiVO4 nanocomposite using an aqueous electrolyte. The data obtained shows the MoS2/BiVO4 nanocomposite to be a promising candidate for supercapacitor energy storage applications.

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We report the metal organic vapor phase epitaxy (MOVPE) growth and characterization of non‐polar (11$ \bar 2 $0) a ‐plane Alx Ga1–xN on (1$ \bar 1 $02) r ‐plane sapphire substrates over the entire composition range. Alx Ga1–xN samples with ∼0.8 μm thick layers and with x = 0, 0.18, 0.38, 0.46, 0.66, and 1.0 have been grown on r ‐plane sapphire substrates. The layer quality can be improved by using a 3‐stage AlN nucleation layer and appropriate V/III ratio switching following nucleation. All a ‐plane AlGaN epilayers show an anisotropic in‐plane mosaicity, strongly influenced by Al incorporation and growth conditions. Careful lattice parameter measurements show anisotropic in‐plane strain that results in an orthorhombic distortion of the hexagonal unit cell, making Al composition determination from X‐ray diffraction difficult. In general lower Al incorporation is seen in a ‐plane epilayers compared to c ‐plane samples grown under the same conditions. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

We establish a correlation between the internal stress in InN epilayers and their optical properties such as the measured absorption band edge and photoluminescence emission wavelength. By a careful evaluation of the lattice constants of InN epilayers grown on cplane sapphire substrates under various conditions by metalorganic vapor phase epitaxy we find that the films are under primarily hydrostatic stress. This results in a shift in the band edge to higher energy. The effect is significant, and may be responsible for some of the variations in InN bandgap reported in the literature.

The authors investigated the inductively coupled plasma reactive-ion etching (ICP-RIE) of β-Ga2O3 using different fluorine and chlorine-based plasmas. Sn-doped (-201) oriented β-Ga2O3 substrates were etched using SF6/Ar, CHF3/Ar, O2/Ar, BCl3/Ar, and Cl2/Ar based ICP-RIE. Appreciable etch rates were obtained only with chlorine and boron-trichloride based plasmas, and the authors performed a comprehensive study on the composition and temperature-dependence of ICP-RIE of β-Ga2O3 in BCl3/Cl2/Ar plasmas in a temperature range of 22 to 205 °C. In general, the etch rate decreased with increasing Cl2 content in BCl3/Cl2/Ar plasmas. A high etch rate of 144 nm/min with a smooth surface morphology was obtained in BCl3/Ar plasmas, compared to 19 nm/min in Cl2/Ar plasmas. The etching behavior of Ga2O3 shows more similarity to that of Al2O3 than to that of GaN.