We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures (P(O2)<10(-5) mbar) and has a three-dimensional character. However, at higher P(O2) the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low P(O2), other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.

Electronic and magnetic structure of Fe3O4/BiFeO3 multiferroic superlattices: First principles calculations J. Appl. Phys. 112, 063925 (2012) Platinum thickness dependence of the inverse spin-Hall voltage from spin pumping in a hybrid yttrium iron garnet/platinum system Appl. Phys. Lett. 101, 132414 (2012) Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistancearea product Appl. Phys. Lett. 101, 102406 (2012) Spin transport and spin dephasing in zinc oxide Appl. Phys. Lett. 101, 082404 (2012) Spin and valley dependent electronic transport in strain engineered graphene

We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents, and the current density required to move DW is only of the order of 10 6 A/cm 2 . For H = 3 Oe, a back and forth DW motion between two stable positions is observed. We also discuss the effect of an applied field on the DW motion.