In this article, a new noise reduction/cancellation technique is proposed to improve noise figure (NF) of a broadband low-noise transconductance amplifier (LNTA) for 5G receivers. The LNTA combines a common-gate (CG) stage for wideband input matching and a common-source (CS) stage for canceling the noise and distortion of the CG stage. Yet, another noise reduction is applied to reduce the channel thermal noise of the noise cancellation stage itself. The technique further exploits current reuse and increases transconductance of the CS transistor while keeping its power consumption low. Fabricated in 28-nm CMOS, the proposed LNTA is capable of driving an external 50-load and achieves a NF of 2.09-3.2 dB and input return loss (S 11) better than −10 dB over the 3-dB bandwidth of 20 MHz-4.5 GHz while consuming 4.5 mW from a single 1-V power supply. The achieved gain (S 21) and IIP3 are 15.2 dB and −4.6 dBm, respectively.
In this paper, a wideband low-noise amplifier (LNA) with a two-fold noise cancellation scheme is proposed. Finetuned for advanced CMOS, the proposed LNA architecture uses a common-gate input branch to provide wideband input matching. It is followed by two stages of the common-source structure which cancels the noise and distortion of the first and second stages and relaxes the design restriction on the first noise-cancellation stage. The provided circuit-level analysis is verified by simulations. The proposed LNA is fabricated in 28-nm CMOS. It achieves a minimum noise figure (NF) of 2.5 dB and input return loss (S 11 ) < −15 dB over 0.02-2 GHz bandwidth while consuming only 4.1 mW from a 1 V supply and driving an external 50-load. The −3 dB power gain (S 21 ) is 18.5 dB and IIP3 is +4.25 dBm.
In this article, we apply a new clock-phase reuse technique to a discrete-time infinite impulse response (IIR) complex-signaling bandpass filter (BPF). This leads to a deep improvement in filtering, especially the stopband rejection, while maintaining the area, sampling frequency, and the number of clock phases and their pulsewidths. Fabricated in 28-nm CMOS, the proposed BPF is highly tuneable and is capable of achieving a 70-dB stopband rejection at 50-MHz offset with 25% duty-cycle clocks while consuming 1.65 mW. The achieved in/out-of-band third-order intermodulation intercept point (IIP3) is +2.5 dB and +17.3 dBm, respectively, and the input-referred noise (IRN) is 1 nV/ √ Hz.
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