The presence of quasiparticles in superconducting qubits emerges as an intrinsic constraint on their coherence. While it is difficult to prevent the generation of quasiparticles, keeping them away from active elements of the qubit provides a viable way of improving the device performance. Here we develop theoretically and validate experimentally a model for the effect of a single small trap on the dynamics of the excess quasiparticles injected in a transmon-type qubit. The model allows one to evaluate the time it takes to evacuate the injected quasiparticles from the transmon as a function of trap parameters. With the increase of the trap size, this time decreases monotonically, saturating at the level determined by the quasiparticles diffusion constant and the qubit geometry. We determine the characteristic trap size needed for the relaxation time to approach that saturation value.Comment: 11 pages, 5 figure

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Controlling quasiparticle dynamics can improve the performance of superconducting devices. For example, it has been demonstrated effective in increasing the lifetime and stability of superconducting qubits. Here we study how to optimize the placement of normal-metal traps in transmon-type qubits. When the trap size increases beyond a certain characteristic length, the details of the geometry and trap position, and even the number of traps, become important. We discuss for some experimentally relevant examples how to shorten the decay time of the excess quasiparticle density. Moreover, we show that a trap in the vicinity of a Josephson junction can significantly reduce the steady-state quasiparticle density near that junction, thus, suppressing the quasiparticle-induced relaxation rate of the qubit. Such a trap also reduces the impact of fluctuations in the generation rate of quasiparticles, rendering the qubit more stable.

We develop a valley-dependent envelope function theory that can describe the effects of arbitrary configurations of interface steps and miscuts on the qubit relaxation time. For a given interface roughness, we show how our theory can be used to find the valley-dependent dipole matrix elements, the valley splitting, and the spin-valley coupling as a function of the electromagnetic fields in a Si/SiGe quantum dot spin qubit. We demonstrate that our theory can quantitatively reproduce and explain the result of experimental measurements for the spin relaxation time with only a minimal set of free parameters. Investigating the sample dependence of spin relaxation, we find that at certain conditions for a disordered quantum dot, the spin-valley coupling vanishes. This, in turn, completely blocks the valley-induced qubit decay. We show that the presence of interface steps can in general give rise to a strongly anisotropic behavior of the spin relaxation time. Remarkably, by properly tuning the gate-induced out-of-plane electric field, it is possible to turn the spin-valley hotspot into a "coldspot" at which the relaxation time is significantly prolonged and where the spin relaxation time is additionally first-order insensitive to the fluctuations of the magnetic field. This electrical tunability enables on-demand fast qubit reset and initialization that is critical for many quantum algorithms and error correction schemes. We therefore argue that the valley degree of freedom can be used as an advantage for Si spin qubits.