Pulse thermal processing (PTP) has the capability of processing thin-fi lms and nanoparticles over broad areas utilizing high-density infrared plasma arc lamp technology. Heating rates reaching 600,000°C/s, which is orders of magnitude larger than current state-of-the-art rapid thermal annealing systems, are possible that allow controlled diffusion on the nanoscale. The ability to control heating at these levels permits processing thin-films and nanoparticles on temperature-sensitive substrates such as polymers. The PTP technique has been used to crystallize sputtered amorphous silicon thin-fi lms on sapphire substrates.
Rapid/Pulse Thermal Processing Research SummaryThe effect of pulsed-thermal-processing with high-density plasma arc heating is discussed for 20 nm thick nanocrystalline FePt thin fi lms. The dependence of the A1→L1 0 phase transformation on pulsed time and radiant energy of the pulse is quantifi ed through x-ray diffraction and alternating gradient magnetometry. For 100 ms and 250 ms pulse widths, the phase transformation was observed. Higher radiant energy densities resulted in a larger measured coercivity associated with the L1 0 phase.
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